Invention Grant
- Patent Title: LCOS device and method of fabricating the same
- Patent Title (中): LCOS器件及其制造方法
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Application No.: US14034396Application Date: 2013-09-23
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Publication No.: US09341884B2Publication Date: 2016-05-17
- Inventor: Yi-Ming Hsu , Feng-Ying Hsu , Chieh-Yu Tsai
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: G02F1/1335
- IPC: G02F1/1335 ; G02F1/1343 ; G02F1/1362 ; G02B5/08

Abstract:
The present invention provides a LCOS device including a silicon substrate, a first dielectric layer, a first mirror layer, a second dielectric layer, and a second mirror layer. The first dielectric layer is disposed on the silicon substrate. The first mirror layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first mirror layer. The second mirror layer is disposed on the second dielectric layer.
Public/Granted literature
- US20150085234A1 LCOS DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-03-26
Information query
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