Invention Grant
- Patent Title: Method for trimming carbon-containing film at reduced trimming rate
- Patent Title (中): 降低修整速率的方法来修整含碳膜
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Application No.: US14065114Application Date: 2013-10-28
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Publication No.: US09343308B2Publication Date: 2016-05-17
- Inventor: Yoshihiro Isii , Ryu Nakano , Naoki Inoue
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/027 ; H01L21/033 ; H01J37/32

Abstract:
A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.
Public/Granted literature
- US20150118846A1 Method For Trimming Carbon-Containing Film At Reduced Trimming Rate Public/Granted day:2015-04-30
Information query
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