Improved sidewall image transfer (SIT) techniques are provided. In one aspect, a SIT method includes the following steps. An oxide layer is formed on a substrate. A transfer layer is formed on a side of the oxide layer opposite the substrate. A mandrel layer is formed on a side of the transfer layer opposite the oxide layer. The mandrel layer is patterned to form at least one mandrel. Sidewall spacers are formed on opposite sides of the at least one mandrel. The at least one mandrel is removed, wherein the transfer layer covers and protects the substrate during removal of the at least one mandrel. The transfer layer is etched using the sidewall spacers as a hardmask to form a patterned transfer layer. The oxide layer and the sidewall spacers are removed from the substrate. The substrate is etched using the patterned transfer layer as a hardmask.