发明授权
- 专利标题： Semiconductor device including work function adjusting element, and method of manufacturing the same
- 专利标题（中）： 包括功能调节元件的半导体装置及其制造方法
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申请号： US13914956申请日： 2013-06-11
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公开(公告)号： US09343373B2公开(公告)日： 2016-05-17
- 发明人: Kenzo Manabe
- 申请人： Kenzo Manabe
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2010-173478 20100802; JP2011-076787 20110330
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/28 ; H01L27/092 ; H01L29/49 ; H01L29/51 ; H01L29/78 ; H01L29/66
摘要：
A semiconductor device has a substrate; and an N-channel MIS transistor and a P-channel MIS transistor provided on the same substrate; each of the N-channel MIS transistor and the P-channel MIS transistor having a Hf-containing, high-k gate insulating film, and a gate electrode provided over the high-k gate insulating film, the N-channel MIS transistor having a silicon oxide film or a silicon oxynitride film, which contains a first work function adjusting element, provided between the substrate and the high-k gate insulating film, and, the P-channel MIS transistor having a silicon oxide film or a silicon oxynitride film, which contains the first work function adjusting element same as that contained in the N-channel MIS transistor, provided between the high-k gate insulating film and the gate electrode.
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