Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14714111Application Date: 2015-05-15
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Publication No.: US09343453B2Publication Date: 2016-05-17
- Inventor: Ryo Kanda , Tetsu Toda , Yasushi Nakahara , Yoshinori Kaya
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-142924 20130708
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/76 ; H01L29/78 ; H01L27/02 ; H01L29/40 ; H01L29/10 ; H01L29/06

Abstract:
A field plate electrode is repetitively disposed in a folded manner or a spiral shape in a direction along an edge of a first circuit region. A coupling transistor couples a first circuit to a second circuit lower in supply voltage than the first circuit. A second conductivity type region is disposed around the coupling transistor. A part of the field plate electrode partially overlaps with the second conductivity type region. The field plate electrode is electrically coupled to a drain electrode of the coupling transistor at a portion located on the first circuit region side from a center thereof in a width direction of the separation region. A ground potential or a power potential of the second circuit is applied to the field plate electrode at a portion located on the second conductivity type region side from the center.
Public/Granted literature
- US20150262990A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-09-17
Information query
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