Invention Grant
- Patent Title: Metal gate for robust ESD protection
- Patent Title (中): 金属门，用于强大的ESD保护
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Application No.: US14477390Application Date: 2014-09-04
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Publication No.: US09343456B2Publication Date: 2016-05-17
- Inventor: Amaury Gendron-Hansen , Jagar Singh , Andy Wei
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/739 ; H01L29/66 ; H01L29/45 ; H01L29/423 ; H01L21/285
Abstract:
A method of forming a metal gate diode ESD protection device and the resulting device are provided. Embodiments include forming a metal gate diode including a metal gate on a substrate; forming an n-type cathode on a first side of the metal gate diode; and forming a p-type anode on a second side of the metal gate diode, opposite the first side.
Public/Granted literature
- US20160071835A1 METAL GATE FOR ROBUST ESD PROTECTION Public/Granted day:2016-03-10
Information query
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