Invention Grant
- Patent Title: Thin film transistor, display apparatus including the thin film transistor, and method of manufacturing the thin film transistor
- Patent Title (中): 薄膜晶体管，包括薄膜晶体管的显示装置，以及薄膜晶体管的制造方法
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Application No.: US14050825Application Date: 2013-10-10
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Publication No.: US09343577B2Publication Date: 2016-05-17
- Inventor: Yul-Kyu Lee , Kyu-Sik Cho , Sun Park
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0057294 20130521
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/786 ; H01L29/49 ; H01L27/32
Abstract:
A thin film transistor includes: a substrate, a semiconductor layer disposed on the substrate, a first gate electrode and a second gate electrode disposed on the semiconductor layer, a gate insulating layer disposed between the semiconductor layer and the first and second gate electrodes and having a first through hole between the first and second gate electrodes and a capping layer covering the first gate electrode and contacting the semiconductor layer via the first through hole. The capping layer includes a conductive material.
Public/Granted literature
Information query
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