Invention Grant
- Patent Title: Memory cells having a self-aligning polarizer
- Patent Title (中): 具有自对准偏振器的存储单元
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Application No.: US14219748Application Date: 2014-03-19
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Publication No.: US09344345B2Publication Date: 2016-05-17
- Inventor: Jonathan D. Harms , Wei Chen , Sunil S. Murthy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H04L12/26 ; H01L43/12
Abstract:
Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer.
Public/Granted literature
- US20150270480A1 MEMORY CELLS HAVING A SELF-ALIGNING POLARIZER Public/Granted day:2015-09-24
Information query
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