Invention Grant
US09348217B2 Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method
有权
掩模空白基板，具有多层反射膜的基板，透射掩模板，反射掩模板，透射掩模，反射掩模和半导体器件制造方法
- Patent Title: Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask blank, transmissive mask, reflective mask, and semiconductor device fabrication method
- Patent Title (中): 掩模空白基板，具有多层反射膜的基板，透射掩模板，反射掩模板，透射掩模，反射掩模和半导体器件制造方法
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Application No.: US14348349Application Date: 2013-03-28
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Publication No.: US09348217B2Publication Date: 2016-05-24
- Inventor: Kazuhiro Hamamoto , Toshihiko Orihara , Hirofumi Kozakai , Youichi Usui , Tsutomu Shoki , Junichi Horikawa
- Applicant: HOYA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-079762 20120330
- International Application: PCT/JP2013/059200 WO 20130328
- International Announcement: WO2013/146991 WO 20131003
- Main IPC: G03F1/50
- IPC: G03F1/50 ; G03F1/22 ; G03F1/60
Abstract:
Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
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