Invention Grant
- Patent Title: Semiconductor storage device and method of throttling performance of the same
- Patent Title (中): 半导体存储装置及其节流方法的性能相同
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Application No.: US14504568Application Date: 2014-10-02
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Publication No.: US09348521B2Publication Date: 2016-05-24
- Inventor: Han-Bin Yoon , Yeong-jae Woo , Dong-gi Lee , Kwang-Ho Kim , Hyuck-Sun Kwon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2010-0080697 20100820; KR10-2010-0080698 20100820; KR10-2010-0080699 20100820
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G06F13/16

Abstract:
A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device; and a controller configured to receive a write command from a host and program write data received from the host to the non-volatile memory device in response to the write command. The controller inserts idle time after receiving the write data from the host and/or after programming the write data to the non-volatile memory device.
Public/Granted literature
- US20150019801A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF THROTTLING PERFORMANCE OF THE SAME Public/Granted day:2015-01-15
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