Invention Grant
US09349433B2 Hidden refresh of weak memory storage cells in semiconductor memory
有权
半导体存储器中的弱存储器存储单元的隐藏刷新
- Patent Title: Hidden refresh of weak memory storage cells in semiconductor memory
- Patent Title (中): 半导体存储器中的弱存储器存储单元的隐藏刷新
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Application No.: US14175857Application Date: 2014-02-07
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Publication No.: US09349433B2Publication Date: 2016-05-24
- Inventor: David Wang
- Applicant: INPHI CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INPHI CORPORATION
- Current Assignee: INPHI CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Ogawa P.C.
- Agent Richard T. Ogawa
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C11/4063 ; G11C11/406 ; G11C11/4076

Abstract:
In an example, the present invention provides a computing system. The system has a memory interface device comprising a counter, a dynamic random access memory device coupled to the memory interface device. The device comprises a plurality of banks, each of the banks having a subarray, each subarray having a plurality of memory cells. The device has a data interface coupled to the plurality of banks. The device has an address interface coupled to the plurality of banks, and a particular pre-charge command configured to be transferred to the memory interface device. The counter is adapted to count a measured time duration from a first time when data are available at the data interface to a second time when a pre-charge command is received by the address interface.
Public/Granted literature
- US20140269139A1 HIDDEN REFRESH OF WEAK MEMORY STORAGE CELLS IN SEMICONDUCTOR MEMORY Public/Granted day:2014-09-18
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