Invention Grant
US09349433B2 Hidden refresh of weak memory storage cells in semiconductor memory 有权
半导体存储器中的弱存储器存储单元的隐藏刷新

Hidden refresh of weak memory storage cells in semiconductor memory
Abstract:
In an example, the present invention provides a computing system. The system has a memory interface device comprising a counter, a dynamic random access memory device coupled to the memory interface device. The device comprises a plurality of banks, each of the banks having a subarray, each subarray having a plurality of memory cells. The device has a data interface coupled to the plurality of banks. The device has an address interface coupled to the plurality of banks, and a particular pre-charge command configured to be transferred to the memory interface device. The counter is adapted to count a measured time duration from a first time when data are available at the data interface to a second time when a pre-charge command is received by the address interface.
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