Invention Grant
- Patent Title: Wafer with improved plating current distribution
- Patent Title (中): 具有改善电镀电流分布的晶圆
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Application No.: US14487250Application Date: 2014-09-16
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Publication No.: US09349641B2Publication Date: 2016-05-24
- Inventor: Thomas Werner , Oliver Aubel , Frank Feustel
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L27/02 ; H01L23/528 ; H01L21/56
Abstract:
A semiconductor wafer is provided including a plurality of dies, each of the plurality of dies including a plurality of semiconductor devices, a plurality of die seals, each of the plurality of die seals being formed at a perimeter of one of the plurality of dies, and a plurality of electrically conductive links, each of the plurality of conductive links connecting one of the plurality of die seals with another one of the plurality of die seals.
Public/Granted literature
- US20160079116A1 WAFER WITH IMPROVED PLATING CURRENT DISTRIBUTION Public/Granted day:2016-03-17
Information query
IPC分类:
