Invention Grant
- Patent Title: Passing access line structure in a memory device
- Patent Title (中): 在存储设备中传递访问线路结构
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Application No.: US14511371Application Date: 2014-10-10
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Publication No.: US09349737B2Publication Date: 2016-05-24
- Inventor: Srinivas Pulugurtha , Sourabh Dhir , Rajesh N. Gupta , Sanh D. Tang , Si-Woo Lee , Haitao Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L27/108 ; G11C11/407
Abstract:
A method for memory device fabrication includes forming a plurality of continuous fins on a substrate. An insulator material is formed around the fins. The continuous fins are etched into segmented fins to form exposed areas between the segmented fins. An insulator material is formed in the exposed areas wherein the insulator material in the exposed areas is formed higher than the insulator material around the fins. A metal is formed over the fins and the insulator material. The metal formed over the exposed areas is formed to a shallower depth than over the fins.
Public/Granted literature
- US20160104709A1 PASSING ACCESS LINE STRUCTURE IN A MEMORY DEVICE Public/Granted day:2016-04-14
Information query
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