发明授权
US09351899B2 Dynamic temperature adjustments in spin transfer torque magnetoresistive random-access memory (STT-MRAM)
有权
自旋转移磁阻随机存取存储器（STT-MRAM）中的动态温度调节
- 专利标题： Dynamic temperature adjustments in spin transfer torque magnetoresistive random-access memory (STT-MRAM)
- 专利标题（中）： 自旋转移磁阻随机存取存储器（STT-MRAM）中的动态温度调节
-
申请号： US14320219申请日： 2014-06-30
-
公开(公告)号： US09351899B2公开(公告)日： 2016-05-31
- 发明人: Pradip Bose , Alper Buyuktosunoglu , Xiaochen Guo , Hillery C. Hunter , Jude A. Rivers , Vijayalakshmi Srinivasan
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Toler Law Group, P.C.
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; G11C7/04 ; A61H3/00 ; A61G5/02 ; A61G5/10
摘要：
Systems and methods to manage memory on a spin transfer torque magnetoresistive random-access memory (STT-MRAM) are provided. A particular method of managing memory includes determining a temperature associated with the memory and determining a level of write queue utilization associated with the memory. A write operation may be performed based on the level of write queue utilization and the temperature.
公开/授权文献
信息查询
