Invention Grant
- Patent Title: Perpendicularly magnetized thin film structure and method for manufacturing the same
- Patent Title (中): 垂直磁化薄膜结构及其制造方法
-
Application No.: US13678856Application Date: 2012-11-16
-
Publication No.: US09355669B2Publication Date: 2016-05-31
- Inventor: Gyung Min Choi , Byoung Chul Min , Kyung Ho Shin
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Seoul
- Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Seoul
- Agency: Ladas & Parry LLP
- Priority: KR10-2011-0120757 20111118
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01F10/32 ; G11B5/64 ; G11B5/72 ; G11B5/66 ; G11B5/84 ; H01F10/12 ; H01F41/32 ; G11B5/65 ; H01L43/12
Abstract:
A perpendicularly magnetized thin film structure and a method of manufacturing the perpendicularly magnetized thin film structure are provided. The perpendicularly magnetized thin film structure includes i) a base layer, ii) a magnetic layer located on the base layer and having an L10-crystalline structure, and iii) a metal oxide layer located on the magnetic layer.
Public/Granted literature
- US20130130063A1 PERPENDICULARLY MAGNETIZED THIN FILM STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-05-23
Information query
IPC分类:
