Invention Grant
US09355693B2 Memory receiver circuit for use with memory of different characteristics
有权
存储器接收电路用于与不同特性的存储器
- Patent Title: Memory receiver circuit for use with memory of different characteristics
- Patent Title (中): 存储器接收电路用于与不同特性的存储器
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Application No.: US13830637Application Date: 2013-03-14
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Publication No.: US09355693B2Publication Date: 2016-05-31
- Inventor: Moonkyun Maeng , Aaron Martin , Hsiao-Ching Chuang
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C7/10 ; G11C5/14 ; G11C16/28

Abstract:
Embodiments include systems, methods, and apparatuses for reading a data signal from a memory, such as a dynamic random access memory (DRAM). In one embodiment, a memory receiver may include a differential amplifier to receive a data signal from the memory and pass a differential output signal based on a voltage difference between the data signal and a reference voltage. The data signal may have a first direct current (DC) average voltage level, and the differential amplifier may shift the differential output signal to a second DC average voltage level that is substantially constant over a range of values of the first DC average voltage level. In another embodiment, a voltage offset compensation (VOC) circuit may apply a compensation voltage to the output signal that is based on an activated rank or an identity of the memory module. Other embodiments may be described and claimed.
Public/Granted literature
- US20140269130A1 MEMORY RECEIVER CIRCUIT FOR USE WITH MEMORY OF DIFFERENT CHARACTERISTICS Public/Granted day:2014-09-18
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