Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US14368865Application Date: 2012-12-13
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Publication No.: US09355822B2Publication Date: 2016-05-31
- Inventor: Norikazu Yamada , Toshifumi Tachikawa , Koichi Nagami , Tatsuya Ikenari , Daisuke Maehara
- Applicant: Tokyo Electron Limited , Daihen Corporation
- Applicant Address: JP Tokyo JP Osaka
- Assignee: TOKYO ELECTRON LIMITED,DAIHEN CORPORATION
- Current Assignee: TOKYO ELECTRON LIMITED,DAIHEN CORPORATION
- Current Assignee Address: JP Tokyo JP Osaka
- Agency: Pearne & Gordon LLP
- Priority: JP2011-286024 20111227
- International Application: PCT/JP2012/007975 WO 20121213
- International Announcement: WO2013/099133 WO 20130704
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H01J37/32 ; C23C16/515 ; C23C16/509 ; H05H1/46

Abstract:
In a capacitively coupled plasma processing apparatus, a susceptor (lower electrode) 16 within a decompression chamber 10 faces an upper electrode 46 serving as a shower head. The susceptor 16 is electrically connected with a first high frequency power supply 36 and a second high frequency power supply 38 via matching devices 40 and 42, respectively. The first high frequency power supply 36 is formed of a linear amplifier type high frequency power supply and outputs a first high frequency power RF1 for plasma generation. The second high frequency power supply 38 is formed of a switching type high frequency power supply and outputs a second high frequency power RF2 for ion attraction. A residual high frequency power removing unit 74 is connected to a high frequency power supply line 45 on a side of the second high frequency power supply 38.
Public/Granted literature
- US20140361690A1 PLASMA PROCESSING APPARATUS Public/Granted day:2014-12-11
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