The disclosed technology generally relates to semiconductor-on-insulator (SOI) devices and more particularly to SOI devices having a channel region comprising a Group III-V or a Group IV semiconductor material, and also relates to methods of fabricating the same. In one aspect, a method comprises providing a pre-patterned donor wafer, providing a handling wafer and bonding the pre-patterned donor wafer to the handling wafer by contacting the first oxide layer to the handling wafer. Providing a pre-patterned donor wafer comprises providing a donor substrate comprising a first semiconductor material, forming shallow trench isolation (STI) regions in the donor substrate, and forming fins in the donor substrate in between the STI regions, where each fin comprises a Group III-V or Group IV semiconductor material that is different from the first semiconducting material and laterally extends in a direction parallel to a major surface of the donor substrate and between the STI regions. Providing the pre-patterned donor wafer additionally includes providing a first oxide layer overlying the STI regions and the fins. After bonding the donor wafer to the handling wafer, at least part of the first semiconducting material of the pre-patterned donor wafer is removed and the STI regions and the fins are thinned thereby forming channel regions comprising the Group III-V or Group IV semiconductor material.