发明授权
US09355914B1 Integrated circuit having dual material CMOS integration and method to fabricate same
有权
具有双重材料CMOS集成的集成电路及其制造方法
- 专利标题： Integrated circuit having dual material CMOS integration and method to fabricate same
- 专利标题（中）： 具有双重材料CMOS集成的集成电路及其制造方法
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申请号： US14745999申请日： 2015-06-22
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公开(公告)号： US09355914B1公开(公告)日： 2016-05-31
- 发明人: Effendi Leobandung
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Harrington & Smith
- 代理商 Louis J. PPercello
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/8238 ; H01L29/66 ; H01L21/84 ; H01L29/16 ; H01L29/04 ; H01L21/31 ; H01L21/3213 ; H01L21/306 ; H01L21/02 ; H01L21/283 ; H01L21/311 ; H01L29/201 ; H01L29/78 ; H01L29/06 ; H01L27/092 ; H01L21/324 ; H01L21/265
摘要：
In one aspect thereof the invention provides a structure that includes a substrate having a surface and a plurality of fins supported by the surface of the substrate. The plurality of fins are formed of Group IVA-based crystalline semiconductor material and are spaced apart and generally parallel to one another. In the structure at least some of the plurality of fins comprise an amorphous region forming a nanowire precursor structure that is located along a length of the fin where a Group III-V transistor is to be located. A method to fabricate the structure and other structures is also disclosed.
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