- 专利标题: Complementary metal oxide semiconductor device, optical apparatus including the same, and method of manufacturing the same
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申请号: US14790391申请日: 2015-07-02
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公开(公告)号: US09355917B2公开(公告)日: 2016-05-31
- 发明人: Sang-moon Lee , Young-jin Cho
- 申请人: Sang-moon Lee , Young-jin Cho
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2013-0001789 20130107
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/8258 ; H01L27/092 ; H01L27/15 ; H01L29/267 ; H01L27/06 ; H01L21/02 ; H01L21/306 ; H01L29/16 ; H01L29/20
摘要:
A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.