Invention Grant
US09356046B2 Structure and method for forming CMOS with NFET and PFET having different channel materials
有权
用NFET和具有不同通道材料的PFET形成CMOS的结构和方法
- Patent Title: Structure and method for forming CMOS with NFET and PFET having different channel materials
- Patent Title (中): 用NFET和具有不同通道材料的PFET形成CMOS的结构和方法
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Application No.: US14088025Application Date: 2013-11-22
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Publication No.: US09356046B2Publication Date: 2016-05-31
- Inventor: Kangguo Cheng , Bruce B. Doris , Steven J. Holmes , Ali Khakifirooz
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY
- Assignee: GlobalFoundries Inc.
- Current Assignee: GlobalFoundries Inc.
- Current Assignee Address: KY
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent George Blasiak
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/8238 ; H01L21/84 ; H01L27/092
Abstract:
Embodiments of the present invention provide an improved structure and method for forming CMOS field effect transistors. In embodiments, silicon germanium (SiGe) is formed on a PFET side of a semiconductor structure, while silicon is disposed on an NFET side of a semiconductor structure. A narrow isolation region is formed between the PFET and NFET. The NFET fins are comprised of silicon and the PFET fins are comprised of silicon germanium.
Public/Granted literature
- US20150145048A1 STRUCTURE AND METHOD FOR FORMING CMOS WITH NFET AND PFET HAVING DIFFERENT CHANNEL MATERIALS Public/Granted day:2015-05-28
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