Invention Grant
- Patent Title: Image sensor with buried light shield and vertical gate
- Patent Title (中): 图像传感器带埋地灯屏蔽和垂直门
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Application No.: US13959362Application Date: 2013-08-05
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Publication No.: US09356061B2Publication Date: 2016-05-31
- Inventor: Xiaofeng Fan , Philip H. Li , Chung Chun Wan , Anup K. Sharma , Xiangli Li
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Brownstein Hyatt Farber & Schreck, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.
Public/Granted literature
- US20150035028A1 Image Sensor with Buried Light Shield and Vertical Gate Public/Granted day:2015-02-05
Information query
IPC分类: