Invention Grant
- Patent Title: Low temperature fabrication of lateral thin film varistor
- Patent Title (中): 横向薄膜压敏电阻的低温制造
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Application No.: US14632074Application Date: 2015-02-26
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Publication No.: US09356089B1Publication Date: 2016-05-31
- Inventor: Jeffrey P. Gambino , Richard S. Graf , Sudeep Mandal
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Damion Josephs, Esq.
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/02
Abstract:
A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.
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