发明授权
- 专利标题： Polycrystalline aluminum nitride base material for crystal growth of GaN-base semiconductor and method for manufacturing GaN-base semiconductor using the same
- 专利标题（中）： 用于GaN基半导体的晶体生长的多晶氮化铝基材及使用其制造GaN基半导体的方法
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申请号： US13806337申请日： 2011-09-26
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公开(公告)号： US09356101B2公开(公告)日： 2016-05-31
- 发明人: Hiroshi Komorita , Noritaka Nakayama , Kentaro Takanami
- 申请人： Hiroshi Komorita , Noritaka Nakayama , Kentaro Takanami
- 申请人地址： JP Tokyo JP Kanagawa-ken
- 专利权人： KABUSHIKI KAISHA TOSHIBA,TOSHIBA MATERIALS CO., LTD.
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA,TOSHIBA MATERIALS CO., LTD.
- 当前专利权人地址： JP Tokyo JP Kanagawa-ken
- 代理机构： Harness, Dickey & Pierce, PLC
- 优先权： JP2010-215697 20100927
- 国际申请： PCT/JP2011/071884 WO 20110926
- 国际公布： WO2012/043474 WO 20120405
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/20 ; C04B35/581 ; C04B41/00 ; C04B41/50 ; C04B41/87 ; C23C16/30 ; C04B111/00 ; H01L21/02
摘要：
There is provided a polycrystalline aluminum nitride substrate that is effective in growing a GaN crystal. The polycrystalline aluminum nitride base material for use as a substrate material for grain growth of GAN-base semiconductors, contains 1 to 10% by weight of a sintering aid component and has a thermal conductivity of not less than 150 W/m·K, the substrate having a surface free from recesses having a maximum diameter of more than 200 μm.
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