Invention Grant
- Patent Title: High power blue-violet III-nitride semipolar laser diodes
- Patent Title (中): 大功率蓝紫色III族氮化物半极性激光二极管
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Application No.: US14766924Application Date: 2014-02-13
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Publication No.: US09356431B2Publication Date: 2016-05-31
- Inventor: Arash Pourhashemi , Robert M. Farrell , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- International Application: PCT/US2014/016275 WO 20140213
- International Announcement: WO2014/127136 WO 20140821
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/343 ; H01S5/32 ; H01S5/30 ; H01S5/40 ; H01S5/02
Abstract:
A high power blue-violet Ill-nitride semipolar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.
Public/Granted literature
- US20150372456A1 HIGH POWER BLUE-VIOLET III-NITRIDE SEMIPOLAR LASER DIODES Public/Granted day:2015-12-24
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