Invention Grant
- Patent Title: Level shifter
- Patent Title (中): 电平移位器
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Application No.: US14554047Application Date: 2014-11-26
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Publication No.: US09356584B2Publication Date: 2016-05-31
- Inventor: Hsiang-Chi Li
- Applicant: NOVATEK Microelectronics Corp.
- Applicant Address: TW Hsinchu Science Park, Hsin-Chu
- Assignee: NOVATEK Microelectronics Corp.
- Current Assignee: NOVATEK Microelectronics Corp.
- Current Assignee Address: TW Hsinchu Science Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW103128470A 20140819
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H03K3/356 ; H03K19/0185

Abstract:
A level shifter for high-speed level shifting includes a first P-channel transistor, comprising a gate coupled to a drain, and a source coupled to a system voltage; a second P-channel transistor, comprising a gate coupled to the gate of the first P-channel transistor, and a source coupled to the system voltage; a first N-channel transistor, comprising a drain coupled to the drain of the first P-channel transistor, and a source coupled to a ground level; and a second N-channel transistor, comprising a drain coupled to a drain of the second P-channel transistor, and a source coupled to the ground level; wherein the first N-channel transistor and the second N-channel transistor are low-threshold-voltage transistors or native transistors.
Public/Granted literature
- US20160056802A1 Level Shifter Public/Granted day:2016-02-25
Information query
IPC分类: