发明授权
- 专利标题： Gas barrier film, process for production of gas barrier film, and electronic device
- 专利标题（中）： 阻气膜，阻气膜的制造方法以及电子装置
-
申请号： US13810544申请日： 2011-07-07
-
公开(公告)号： US09359505B2公开(公告)日： 2016-06-07
- 发明人: Hiromoto Ii , Satoshi Ito , Makoto Honda , Kiyoshi Oishi , Issei Suzuki
- 申请人： Hiromoto Ii , Satoshi Ito , Makoto Honda , Kiyoshi Oishi , Issei Suzuki
- 申请人地址： JP Tokyo
- 专利权人： KONICA MINOLTA HOLDINGS, INC.
- 当前专利权人： KONICA MINOLTA HOLDINGS, INC.
- 当前专利权人地址： JP Tokyo
- 代理机构： Lucas & Mercanti, LLP
- 优先权： JP2010-167914 20100727; JP2010-257660 20101118; JP2010-285519 20101222; JP2011-004588 20110113
- 国际申请： PCT/JP2011/065568 WO 20110707
- 国际公布： WO2012/014653 WO 20120202
- 主分类号： C09D1/00
- IPC分类号： C09D1/00 ; B05D5/00 ; C08J7/12 ; C08J7/04
摘要：
The present invention provides a gas barrier film having high barrier properties, folding/bending resistance and smoothness and excellent cutting suitability, and also provides an organic photoelectric conversion element equipped with the gas barrier film. The gas barrier film is characterized by having a gas barrier layer unit (5) on a side face of at least one surface of a base material (2), wherein the gas barrier layer unit (5) comprises a first barrier layer (3) formed by a chemical vapor deposition method and a second barrier layer (4) formed by applying a silicon compound onto the first barrier layer (3) to form a coating film and modifying the coating film, and wherein the second barrier layer (4) has an unmodified region (4B) on a side facing the base material and a modified region (4A) on a side facing the front layer of the film.
公开/授权文献
信息查询
IPC分类:
