Invention Grant
- Patent Title: Pellicle structure and method for forming the same
- Patent Title (中): 薄膜结构及其形成方法
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Application No.: US14260651Application Date: 2014-04-24
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Publication No.: US09360749B2Publication Date: 2016-06-07
- Inventor: Yun-Yue Lin , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: G03F1/62
- IPC: G03F1/62 ; G03F1/64 ; G03F1/00
Abstract:
A pellicle structure, a pellicle-mask structure, and a method for forming the pellicle structure are provided. The pellicle structure includes a pellicle film made of a carbon-based material. In addition, the pellicle film is configured to protect a mask structure in a lithography process. The pellicle-mask structure includes a mask substrate having a mask pattern formed over the mask substrate and the pellicle frame disposed on the mask substrate. The pellicle-mask structure further includes the pellicle film disposed on the pellicle frame.
Public/Granted literature
- US20150309404A1 PELLICLE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2015-10-29
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