Invention Grant
US09362116B2 Methods of forming oxide thin film and electrical devices and thin film transistors using the methods
有权
使用该方法形成氧化物薄膜和电子器件和薄膜晶体管的方法
- Patent Title: Methods of forming oxide thin film and electrical devices and thin film transistors using the methods
- Patent Title (中): 使用该方法形成氧化物薄膜和电子器件和薄膜晶体管的方法
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Application No.: US14127690Application Date: 2011-11-22
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Publication No.: US09362116B2Publication Date: 2016-06-07
- Inventor: Hyun Jae Kim , Hyun Soo Shin , You Seung Rim
- Applicant: Hyun Jae Kim , Hyun Soo Shin , You Seung Rim
- Applicant Address: KR Seoul
- Assignee: Indystry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: Indystry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: KR Seoul
- Agency: Carter, DeLuca, Farrell & Schmit, LLP
- Priority: KR10-2011-0005037 20110118; KR10-2011-0043493 20110509
- International Application: PCT/KR2011/008928 WO 20111122
- International Announcement: WO2012/099325 WO 20120726
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/58 ; H01L21/02 ; H01L29/24 ; H01L29/49 ; H01L29/66 ; H01L29/786
Abstract:
Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100° C. to about 400° C.
Public/Granted literature
- US20140239292A1 METHODS OF FORMING OXIDE THIN FILM AND ELECTRICAL DEVICES AND THIN FILM TRANSISTORS USING THE METHODS Public/Granted day:2014-08-28
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