发明授权
- 专利标题： Systems and methods for a sequential spacer scheme
- 专利标题（中）： 用于顺序间隔方案的系统和方法
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申请号： US14262279申请日： 2014-04-25
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公开(公告)号： US09362132B2公开(公告)日： 2016-06-07
- 发明人: Shih-Ming Chang , Ming-Feng Shieh , Ru-Gun Liu , Tsai-Sheng Gau
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L29/06
摘要：
The present disclosure describes methods for transferring a desired layout into a target layer. The method includes a step of forming a spacer, having a second width, around a first and a second desired layout feature pattern of the desired layout over a semiconductor substrate. The first desired layout feature pattern is formed using a first sub-layout and the second desired layout feature pattern is formed using a second sub-layout. The first and second desired layout feature patterns are separated by a first width. The method further includes forming a third desired layout feature pattern according to a third sub-layout. The third desired layout feature pattern is shaped in part by the spacer. The method further includes removing the spacer from around the first and second desired layout feature pattern and etching the target layer using the first, second, and third layout feature patterns as masking features.
公开/授权文献
- US20150311086A1 Systems and Methods for a Sequential Spacer Scheme 公开/授权日：2015-10-29
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