发明授权
- 专利标题： Hybrid interconnect scheme and methods for forming the same
- 专利标题（中）： 混合互连方案及其形成方法
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申请号： US14229306申请日： 2014-03-28
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公开(公告)号： US09362164B2公开(公告)日： 2016-06-07
- 发明人: Chen-Hua Yu , Tien-I Bao
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/768 ; H01L23/532
摘要：
A device includes a first low-k dielectric layer, and a copper-containing via in the first low-k dielectric layer. The device further includes a second low-k dielectric layer over the first low-k dielectric layer, and an aluminum-containing metal line over and electrically coupled to the copper-containing via. The aluminum-containing metal line is in the second low-k dielectric layer.
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