发明授权
US09362226B2 Three-dimensional (3D) semiconductor devices and methods of fabricating 3D semiconductor devices
有权
三维(3D)半导体器件和制造3D半导体器件的方法
- 专利标题: Three-dimensional (3D) semiconductor devices and methods of fabricating 3D semiconductor devices
- 专利标题(中): 三维(3D)半导体器件和制造3D半导体器件的方法
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申请号: US14637755申请日: 2015-03-04
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公开(公告)号: US09362226B2公开(公告)日: 2016-06-07
- 发明人: Jaegoo Lee , Youngwoo Park
- 申请人: Jaegoo Lee , Youngwoo Park
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2014-0027243 20140307
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L29/40 ; H01L23/02 ; H01L23/528 ; H01L23/522 ; H01L27/115
摘要:
A three-dimensional (3D) semiconductor device includes a stack of conductive layers spaced from each other in a vertical direction, the stack having a staircase-shaped section in a connection region, and ends of the conductive layers constituting treads of the staircase-shaped section, respectively. The 3D semiconductor device further includes buffer patterns disposed on and protruding above the respective ends of the conductive layers, an interconnection structure disposed above the stack and including conductive lines, and contact plugs extending vertically between the conductive lines and the buffer patterns and electrically connected to the conductive layers of the stack via the buffer patterns.