Invention Grant
US09362239B2 Vertical breakdown protection layer 有权
垂直击穿保护层

Vertical breakdown protection layer
Abstract:
The present disclosure relates to a semiconductor structure including a plurality of connecting lines arranged on a plurality of vertical levels, the plurality of connecting lines including at least a first connecting line arranged in a first vertical level and a second connecting line arranged in a second vertical level, different from the first vertical level, and a breakdown prevention layer placed in at least part of the vertical space separating the first connecting line from the second connecting line.
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