Invention Grant
US09362339B2 Semiconductor elements stacked and bonded with an anisotropic conductive adhesive
有权
用各向异性导电粘合剂堆叠和结合的半导体元件
- Patent Title: Semiconductor elements stacked and bonded with an anisotropic conductive adhesive
- Patent Title (中): 用各向异性导电粘合剂堆叠和结合的半导体元件
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Application No.: US14614961Application Date: 2015-02-05
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Publication No.: US09362339B2Publication Date: 2016-06-07
- Inventor: Shunpei Yamazaki , Hiroko Abe , Yukie Nemoto , Ryoji Nomura , Mikio Yukawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2004-328295 20041111; JP2004-328298 20041111
- Main IPC: H01L27/24
- IPC: H01L27/24 ; B82Y10/00 ; G11C13/00 ; G11C17/14 ; G11C17/16 ; G11C17/18 ; H01L21/822 ; H01L27/06 ; H01L45/00 ; H01L23/66 ; H01L27/28 ; H01L51/00 ; H01L27/12

Abstract:
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
Public/Granted literature
- US20150144858A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-05-28
Information query
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