Invention Grant
- Patent Title: Display device comprising dual transistor with LDD regions overlapping the gate electrodes and one of a source electrode and a drain electrode of first transistor is electrically connected to the second gate electrode
- Patent Title (中): 包括具有与栅电极重叠的LDD区和第一晶体管的源电极和漏电极之一的双晶体管的显示装置电连接到第二栅电极
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Application No.: US14510463Application Date: 2014-10-09
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Publication No.: US09366971B2Publication Date: 2016-06-14
- Inventor: Hiroki Adachi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP10-321123 19981111; JP11-196734 19990709
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03B27/00 ; H01L21/027 ; H01L27/12 ; H01L29/66 ; G03B27/16 ; G09G3/32
Abstract:
The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X (X=0.1 μm to 1000 μm), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method.
Public/Granted literature
- US20150029483A1 Exposure Device, Exposure Method and Method of Manufacturing Semiconductor Device Public/Granted day:2015-01-29
Information query
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