Invention Grant
US09368136B2 Magnetoresistive sensor having synthetic antiferromagnetic layer in top and bottom shields
有权
磁阻传感器在顶部和底部屏蔽中具有合成反铁磁性层
- Patent Title: Magnetoresistive sensor having synthetic antiferromagnetic layer in top and bottom shields
- Patent Title (中): 磁阻传感器在顶部和底部屏蔽中具有合成反铁磁性层
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Application No.: US14192388Application Date: 2014-02-27
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Publication No.: US09368136B2Publication Date: 2016-06-14
- Inventor: Zhengqi Lu , Daniel Hassett , Paula McElhinney , Jiansheng Xu
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Agency: HolzerIPLaw, PC
- Main IPC: G11B5/115
- IPC: G11B5/115 ; G11B5/39
Abstract:
In accordance with one implementation of the described technology, an apparatus comprises a sensor structure including a top shield which includes a top shield synthetic antiferromagnetic layer and a bottom shield including a bottom shield synthetic antiferromagnetic layer, wherein the bottom synthetic antiferromagnetic shield layer acts as a seed layer structure.
Public/Granted literature
- US20150243307A1 MAGNETORESISTIVE SENSOR Public/Granted day:2015-08-27
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