Invention Grant
US09368220B2 Non-volatile memory device and method for shortened erase operation during testing
有权
用于在测试期间缩短擦除操作的非易失性存储器件和方法
- Patent Title: Non-volatile memory device and method for shortened erase operation during testing
- Patent Title (中): 用于在测试期间缩短擦除操作的非易失性存储器件和方法
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Application No.: US14451166Application Date: 2014-08-04
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Publication No.: US09368220B2Publication Date: 2016-06-14
- Inventor: Chun-Hsiung Hung , Kuen-Long Chang , Ken-Hui Chen , Nai-Ping Kuo , Chin-Hung Chang , Chang-Ting Chen
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: G11C16/16
- IPC: G11C16/16 ; G11C16/14 ; G11C29/34 ; G11C16/04 ; G11C29/26
Abstract:
A nonvolatile memory array has a multiple erase procedures of different durations. A block of memory cells of the array can be erased by one of the different erase procedures.
Public/Granted literature
- US20140376311A1 METHOD AND APPRATUS FOR SHORTENED ERASE OPTION Public/Granted day:2014-12-25
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