- Patent Title: Under-fill material and method for producing semiconductor device
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Application No.: US14732517Application Date: 2015-06-05
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Publication No.: US09368421B2Publication Date: 2016-06-14
- Inventor: Kosuke Morita , Naohide Takamoto , Hiroyuki Senzai
- Applicant: NITTO DENKO CORPORATION
- Applicant Address: JP Ibaraki-shi
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Ibaraki-shi
- Agency: Alleman Hall McCoy Russell & Tuttle LLP
- Priority: JP2011-259122 20111128; JP2012-049333 20120306; JP2012-119767 20120525
- Main IPC: H01L23/18
- IPC: H01L23/18 ; H01L23/29 ; C08L33/00 ; H01L21/78 ; C09D133/10 ; C08L33/10 ; H01L23/373 ; H01L21/56 ; C08K5/09 ; C08K5/092 ; C08K5/18 ; C08K5/32 ; C09J165/02
Abstract:
The present invention provides an under-fill material with which a semiconductor device having a high connection reliability can be provided while securing a usable material by reducing a difference in thermal-responsive behavior between a semiconductor element and an adherend, and a method for producing a semiconductor device using the under-fill material. In the under-fill material of the present invention, a storage elastic modulus E′ [MPa] and a thermal expansion coefficient α [ppm/K] after carrying out a heat-curing treatment at 175° C. for an hour satisfy the following formula (1) at 25° C.: E′×α
Public/Granted literature
- US20150270188A1 Under-Fill Material and Method for Producing Semiconductor Device Public/Granted day:2015-09-24
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