发明授权
- 专利标题: Memory device
- 专利标题(中): 内存设备
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申请号: US14593077申请日: 2015-01-09
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公开(公告)号: US09368508B2公开(公告)日: 2016-06-14
- 发明人: Jung Geun Jee , Dong Kyum Kim , Jin Gyun Kim , Ki Hyun Hwang
- 申请人: Jung Geun Jee , Dong Kyum Kim , Jin Gyun Kim , Ki Hyun Hwang
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2014-0077241 20140624
- 主分类号: H01L27/115
- IPC分类号: H01L27/115 ; H01L29/16 ; H01L29/788 ; H01L29/792
摘要:
There is provided a peripheral circuit region including a plurality of circuit elements disposed on a first substrate; and a cell region including at least one channel region extending from an upper surface of a second substrate disposed on the first substrate in a direction perpendicular to the upper surface of the second substrate, and a plurality of gate electrode layers and a plurality of insulating layers stacked on the second substrate to be adjacent to the at least one channel region, wherein at least a portion of the first substrate contacts the second substrate, and the first substrate and the second substrate provide a single substrate.
公开/授权文献
- US20150372000A1 MEMORY DEVICE 公开/授权日:2015-12-24
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