Invention Grant
US09368554B2 Apparatuses and methods including memory access in cross point memory
有权
在交叉点存储器中包括存储器访问的装置和方法
- Patent Title: Apparatuses and methods including memory access in cross point memory
- Patent Title (中): 在交叉点存储器中包括存储器访问的装置和方法
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Application No.: US14973446Application Date: 2015-12-17
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Publication No.: US09368554B2Publication Date: 2016-06-14
- Inventor: DerChang Kau , Gianpaolo Spadini
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/24 ; H01L45/00 ; H01L23/528
Abstract:
Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
Public/Granted literature
- US20160104747A1 APPARATUSES AND METHODS INCLUDING MEMORY ACCESS IN CROSS POINT MEMORY Public/Granted day:2016-04-14
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