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US09368975B2 High power RF field effect transistor switching using DC biases 有权
高功率RF场效应晶体管开关采用直流偏置

High power RF field effect transistor switching using DC biases
Abstract:
Systems, methods, and apparatus are provided for tuning in wireless power transfer circuits. One aspect of the disclosure provides an apparatus for tuning. The apparatus includes a field effect transistor having a gate, source, and drain, where the field effect transistor is configured to electrically engage a tuning element to an AC power path. In some embodiments, one of the source or drain contacts is at an alternating current voltage.
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