Invention Grant
- Patent Title: High power RF field effect transistor switching using DC biases
- Patent Title (中): 高功率RF场效应晶体管开关采用直流偏置
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Application No.: US13835285Application Date: 2013-03-15
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Publication No.: US09368975B2Publication Date: 2016-06-14
- Inventor: Cody B. Wheeland , Linda S. Irish , William H. Von Novak, III , Gabriel Isaac Mayo
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01F27/42
- IPC: H01F27/42 ; H01F37/00 ; H01F38/00 ; H02J5/00 ; H02J7/02 ; H03J3/20

Abstract:
Systems, methods, and apparatus are provided for tuning in wireless power transfer circuits. One aspect of the disclosure provides an apparatus for tuning. The apparatus includes a field effect transistor having a gate, source, and drain, where the field effect transistor is configured to electrically engage a tuning element to an AC power path. In some embodiments, one of the source or drain contacts is at an alternating current voltage.
Public/Granted literature
- US20140152115A1 HIGH POWER RF FIELD EFFECT TRANSISTOR SWITCHING USING DC BIASES Public/Granted day:2014-06-05
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