Invention Grant
- Patent Title: Multi-band low noise amplifier
- Patent Title (中): 多频段低噪声放大器
-
Application No.: US14478691Application Date: 2014-09-05
-
Publication No.: US09369097B2Publication Date: 2016-06-14
- Inventor: Saihua Lin
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H03F3/191
- IPC: H03F3/191 ; H03F3/193 ; H03F1/56 ; H03F3/68 ; H03F1/22 ; H03F1/32 ; H03F3/24
Abstract:
An apparatus includes a first path tuned to a first frequency band and a second path tuned to a second frequency band. The apparatus also includes cross-coupled circuitry having a first input coupled to the first path and a second input coupled to the second path and having a first output coupled to the second path and a second output coupled to the first path.
Public/Granted literature
- US20160072455A1 MULTI-BAND LOW NOISE AMPLIFIER Public/Granted day:2016-03-10
Information query
IPC分类:
