Invention Grant
- Patent Title: Tantalum coil for sputtering and method for processing the coil
- Patent Title (中): 用于溅射的钽线圈和用于处理线圈的方法
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Application No.: US13581843Application Date: 2011-03-14
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Publication No.: US09371578B2Publication Date: 2016-06-21
- Inventor: Shiro Tsukamoto
- Applicant: Shiro Tsukamoto
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2010-075373 20100329
- International Application: PCT/JP2011/055916 WO 20110314
- International Announcement: WO2011/122317 WO 20111006
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/56 ; H01J37/34

Abstract:
Provided is a tantalum coil for sputtering disposed between a substrate and a sputtering target, wherein the tantalum coil has irregularities so that the surface roughness Rz of the tantalum coil is 150 μm or more and the number of threads is 15 to 30 TPI (Threads per inch) in a transverse direction and 10 to 30 TPI in a vertical direction. An object of the present invention is to take measures to prevent the sputtered grains accumulated on the surface of a tantalum coil from flaking so as to prevent the generation of particles and arcing that is caused by the flaking of the sputtered grains accumulated on the surface of the coil disposed between a substrate and a sputtering target, and the adhesion of the scattered flakes onto the substrate surface; and thereby to provide a technology of improving the quality and productivity of electronic components and stably providing semiconductor elements and devices.
Public/Granted literature
- US20120318668A1 TANTALUM COIL FOR SPUTTERING AND METHOD FOR PROCESSING THE COIL Public/Granted day:2012-12-20
Information query
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