发明授权
- 专利标题: Silicon interface for dielectric slab waveguide
- 专利标题(中): 介质平板波导的硅界面
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申请号: US14483247申请日: 2014-09-11
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公开(公告)号: US09372316B2公开(公告)日: 2016-06-21
- 发明人: Chewn-Pu Jou , Tien-I Bao
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Associates, LLC
- 主分类号: G02B6/12
- IPC分类号: G02B6/12 ; G02B6/42 ; G02B6/132 ; G02B6/122
摘要:
The present disclosure relates to an integrated chip having coupling elements that couple electromagnetic radiation having a frequency outside of the visible spectrum between a silicon substrate and a dielectric waveguide overlying the silicon substrate. In some embodiments, the integrated chip has a dielectric waveguide disposed within an inter-level dielectric (ILD) material overlying a semiconductor substrate. A first coupling element couples a first electrical signal generated by a driver circuit disposed within the semiconductor substrate to a first end of the dielectric waveguide as electromagnetic radiation having a frequency outside of the visible spectrum. A second coupling element couples the electromagnetic radiation from a second end of the dielectric waveguide to a second electrical signal. By coupling electromagnetic radiation having a frequency outside of the visible spectrum to and from the dielectric waveguide, the disclosed integrated chip is able to overcome a number of drawbacks of optical integrated waveguides.
公开/授权文献
- US20160077294A1 SILICON INTERFACE FOR DIELECTRIC SLAB WAVEGUIDE 公开/授权日:2016-03-17
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