发明授权
- 专利标题: Self-capacitance measurement
- 专利标题(中): 自电容测量
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申请号: US13451352申请日: 2012-04-19
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公开(公告)号: US09372582B2公开(公告)日: 2016-06-21
- 发明人: Samuel Brunet , Bernard J. Hermes , Trond Jarle Pedersen , Luben Hristov Hristov , Shahrooz Shahparnia , Vivek Pant
- 申请人: Samuel Brunet , Bernard J. Hermes , Trond Jarle Pedersen , Luben Hristov Hristov , Shahrooz Shahparnia , Vivek Pant
- 申请人地址: US CA San Jose
- 专利权人: Atmel Corporation
- 当前专利权人: Atmel Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Baker Botts L.L.P.
- 主分类号: G06F3/044
- IPC分类号: G06F3/044 ; H03K17/96
摘要:
In one embodiment, a method includes modifying an amount of charge of a capacitance of a touch sensor. The modified amount of charge resulting in a voltage at the capacitance being a first pre-determined voltage level. The method also includes applying a first pre-determined amount of charge to the capacitance. The application of the first pre-determined amount of charge to the capacitance modifying the voltage at the capacitance from the first pre-determined voltage level to a first charging voltage level. The method also includes determining a first difference between the first charging voltage level and a reference voltage level; and determining whether a touch input to the touch sensor has occurred based on the first difference.
公开/授权文献
- US20130278538A1 Self-Capacitance Measurement 公开/授权日:2013-10-24
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