Non-volatile memory device with current injection sensing amplifier

Invention Grant

US09373407B2 Non-volatile memory device with current injection sensing amplifier 有权

Title translation: 具有电流注入检测放大器的非易失性存储器件

Patent Title: Non-volatile memory device with current injection sensing amplifier
Patent Title (中): 具有电流注入检测放大器的非易失性存储器件
Application No.: US14386816

Application Date: 2013-03-15
Publication No.: US09373407B2

Publication Date: 2016-06-21
Inventor: Yao Zhou , Xiaozhou Qian , Ning Bai
Applicant: Silicon Storage Technology, Inc.
Applicant Address: US CA San Jose
Assignee: Silicon Storage Technology, Inc.
Current Assignee: Silicon Storage Technology, Inc.
Current Assignee Address: US CA San Jose
Agency: DLA Piper LLP (US)
Priority: CN201210089957 20120330
International Application: PCT/US2013/032543 WO 20130315
International Announcement: WO2013/148363 WO 20131003
Main IPC: G11C16/28
IPC: G11C16/28 ; G11C16/26 ; G11C11/56 ; G11C16/08 ; G11C7/06

Abstract:

A non-volatile memory device with a current injection sensing amplifier is disclosed.

Abstract(Chinese):

公开了一种具有电流注入感测放大器的非易失性存储器件。

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