Common problems when programming 3D NAND Flash memory having alternating page orientation include the back-pattern effect and pattern-induced program disturb. Improved programming techniques may substantially reduce these problems and, in turn, increase precision when setting memory cells' threshold voltages. Provided are exemplary techniques that combine aspects of “by-word-line” programming and “by-page” programming. As such, each page may be programmed beginning with the memory cells that are closest to string select structures, and memory cells on multiple even or odd pages may be programmed substantially simultaneously.