Invention Grant
- Patent Title: Defective P-N junction for backgated fully depleted silicon on insulator mosfet
- Patent Title (中): 背衬完全耗尽硅绝缘体上的缺陷P-N结
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Application No.: US14618498Application Date: 2015-02-10
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Publication No.: US09373507B2Publication Date: 2016-06-21
- Inventor: Kangguo Cheng , Bruce B. Doris , Laurent Grenouillet , Ali Khakifirooz , Yannick Le Tiec , Qing Liu , Maud Vinet
- Applicant: GLOBALFOUNDRIES INC. , STMicroelectronics, Inc. , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/225 ; H01L21/761 ; H01L29/06 ; H01L21/762 ; H01L21/84 ; H01L27/12 ; H01L29/66 ; H01L29/786
Abstract:
Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created at the p-n junction such that a leakage resistance of the p-n junction is decreased.
Public/Granted literature
- US20150179453A1 DEFECTIVE P-N JUNCTION FOR BACKGATED FULLY DEPLETED SILICON ON INSULATOR MOSFET Public/Granted day:2015-06-25
Information query
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