发明授权
- 专利标题： Methods for crystallizing a substrate using energy pulses and freeze periods
- 专利标题（中）： 使用能量脉冲和冷冻时间结晶基板的方法
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申请号： US13601069申请日： 2012-08-31
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公开(公告)号： US09373511B2公开(公告)日： 2016-06-21
- 发明人: Bruce E. Adams , Aaron Muir Hunter , Stephen Moffatt
- 申请人： Bruce E. Adams , Aaron Muir Hunter , Stephen Moffatt
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： C30B1/02
- IPC分类号： C30B1/02 ; H01L21/268 ; H01L21/02
摘要：
Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
公开/授权文献
- US20130055731A1 CRYSTALLIZATION METHODS 公开/授权日：2013-03-07
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