Invention Grant
US09373517B2 Semiconductor processing with DC assisted RF power for improved control
有权
具有DC辅助RF功率的半导体处理,以改善控制
- Patent Title: Semiconductor processing with DC assisted RF power for improved control
- Patent Title (中): 具有DC辅助RF功率的半导体处理,以改善控制
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Application No.: US13829669Application Date: 2013-03-14
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Publication No.: US09373517B2Publication Date: 2016-06-21
- Inventor: Jang-Gyoo Yang , Xinglong Chen , Soonam Park , Jonghoon Baek , Saurabh Garg , Shankar Venkataraman
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/67 ; C23C16/50 ; C23C16/503 ; C23C16/505 ; C23C16/509 ; H01J37/32 ; H01L21/3213

Abstract:
Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.
Public/Granted literature
- US20140057447A1 SEMICONDUCTOR PROCESSING WITH DC ASSISTED RF POWER FOR IMPROVED CONTROL Public/Granted day:2014-02-27
Information query
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